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Impact of temperature fluctuations on circuit characteristics in 180nm and 65nm CMOS technologies., и . ISCAS, IEEE, (2006)Shifted Leakage Power Characteristics of Dynamic Circuits Due to Gate Oxide Tunneling., и . SoCC, стр. 151-154. IEEE, (2005)Temperature-Adaptive Energy Reduction Techniques for Nano-CMOS Circuits Displaying Reversed temperature Dependence., и . Journal of Circuits, Systems, and Computers, 17 (3): 423-438 (2008)Reactivation Noise Suppression With Sleep Signal Slew Rate Modulation in MTCMOS Circuits., и . IEEE Trans. Very Large Scale Integr. Syst., 21 (3): 533-545 (2013)Low Power and High Speed Multi Threshold Voltage Interface Circuits., и . IEEE Trans. Very Large Scale Integr. Syst., 17 (5): 638-645 (2009)Variability-aware 7T SRAM circuit with low leakage high data stability SLEEP mode., , и . Integr., (2016)A comprehensive comparison of superior triple-threshold-voltage 7-transistor, 8-transistor, and 9-transistor SRAM cells., и . ISCAS, стр. 2185-2188. IEEE, (2014)2-Phase high-frequency clock distribution with SPLIT-IO dual-Vt repeaters for suppressed leakage currents., и . ISCAS, стр. 2932-2935. IEEE, (2015)Temperature-Adaptive Energy Reduction for Ultra-Low Power-Supply-Voltage Subthreshold Logic Circuits., и . ICECS, стр. 1280-1283. IEEE, (2007)Underlap engineered eight-transistor SRAM cell for stronger data stability enhanced write ability and suppressed leakage power consumption., и . ICECS, стр. 25-28. IEEE, (2013)