Pouya Hashemi

Gate-all-around silicon nanowire complementary metal-oxide-semiconductors: top-down fabrication and transport enhancement techniques.
. Massachusetts Institute of Technology, Cambridge, MA, USA, (2010)ndltd.org (oai:dspace.mit.edu:1721.1/62313).
  •  Doctoral advisor:
  •  First reviewer:
  •  Reviewer:
  •  Advisor:
  •  Author: Pouya Hashemi
  •  Editor:
  •  Other:
more

No resources found