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A multi-defect initialization-based percolation model: a successful scheme to explain dielectric breakdown in MOS devices

, , , , , and . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4): 645-647 (2003)International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02), TOULOUSE, FRANCE, JUL 22-26, 2002.
DOI: 10.1016/S1386-9477(02)00919-0

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A multi-defect initialization-based percolation model: a successful scheme to explain dielectric breakdown in MOS devices, , , , , and . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4): 645-647 (2003)International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02), TOULOUSE, FRANCE, JUL 22-26, 2002.