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Spatio-temporal dynamics of filament formation induced by impurity impact ionization in GaAs

, and . Proc. 9th Int. Conf. on Hot Carriers in Semiconductors, page 347--351. New York, Plenum, (1996)

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Laufende Ladungsdichtewellen beim Stoßionisationsdurchbruch in Halbleitern. (1994)Studienarbeit, Technische Universität Berlin.Traveling carrier density waves in n-GaAs at low-temperature impurity breakdown, and . Phys.~Rev.~B, 54 (23): 16733 (1996)Influence of external circuits on filamentary current flow during impurity breakdown in n-type GaAs, , and . Electronics~Letters, 33 (14): 1261--1262 (1997)Dynamics of nascent current filaments in low-temperature impurity breakdown, and . Phys.~Rev.~B, (1996)Dynamics of current filaments in n-type GaAs under the influence of a transverse magnetic field, , and . Proc. 23rd Int. Conf. Physics of Semiconductors, 1, page 137--140. Singapore, World Scientific, (1996)Formation Dynamics of Current Filaments, , and . Self-Organization in Activator-Inhibitor-Systems: Semiconductors, Gas Discharge, and Chemical Active Media, Wissenschaft & Technik Verlag, Berlin, (1996)Die Simulation raumzeitlicher Dynamik in Halbleitern. Technische Universität Berlin, (1995)Spatio-temporal dynamics of filament formation induced by impurity impact ionization in GaAs, and . Proc. 9th Int. Conf. on Hot Carriers in Semiconductors, page 347--351. New York, Plenum, (1996)Spatial structure of impact-ionization induced current filaments in n-GaAs films, , , , and . Semicond.~Sci.~Technol., (1996)Formation of current filaments in n-type GaAs under crossed electric and magnetic fields, , and . Phys.~Rev.~B, 55 (4): 2207--2213 (1997)