%0 Journal Article %1 journals/mj/WangZK17 %A Wang, Bo %A Zhou, Jun %A Kim, Tony Tae-Hyoung %D 2017 %J Microelectron. J. %K dblp %P 78-85 %T A 0.4 V 12T 2RW dual-port SRAM with suppressed common-row-access disturbance. %U http://dblp.uni-trier.de/db/journals/mj/mj69.html#WangZK17 %V 69

@article{journals/mj/WangZK17, added-at = {2022-04-09T00:00:00.000+0200}, author = {Wang, Bo and Zhou, Jun and Kim, Tony Tae-Hyoung}, biburl = {https://www.bibsonomy.org/bibtex/28ba8d1f32cec500a00b710c39046d9a7/dblp}, ee = {https://doi.org/10.1016/j.mejo.2017.01.003}, interhash = {2c755b2b4d38879f841b098d4e0b902f}, intrahash = {8ba8d1f32cec500a00b710c39046d9a7}, journal = {Microelectron. J.}, keywords = {dblp}, pages = {78-85}, timestamp = {2024-04-08T21:36:56.000+0200}, title = {A 0.4 V 12T 2RW dual-port SRAM with suppressed common-row-access disturbance.}, url = {http://dblp.uni-trier.de/db/journals/mj/mj69.html#WangZK17}, volume = 69, year = 2017 }