Abstract
The transient regime of electron transport in wurtzite InN subjected to
applied electric fields in the Gamma-A and Gamma-M directions is
calculated. The strength of the electron drift velocity overshoot effect
is shown to be substantially dependent on the field direction, being
stronger in the latter than in the former. This behavior is explained on
the basis of the energy dependence of the band structure flattening,
which is weaker in the Gamma-A than in the Gamma-M direction, and gives
rise to a heavier average effective mass. (C) 2002 Elsevier Science B.V.
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