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Band structure effects on the transient electron transport in wurtzite InN

, , , , , and . JOURNAL OF CRYSTAL GROWTH, 246 (3-4): 320-324 (2002)2nd International Specialist Meeting on Bulk Nitride Growth and Related Techniques, AMAZONAS, BRAZIL, MAY 18-23, 2002.
DOI: 10.1016/S0022-0248(02)01757-8

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Band structure effects on the transient electron transport in wurtzite InN, , , , , and . JOURNAL OF CRYSTAL GROWTH, 246 (3-4): 320-324 (2002)2nd International Specialist Meeting on Bulk Nitride Growth and Related Techniques, AMAZONAS, BRAZIL, MAY 18-23, 2002.Transport transient of electrons in wurtzite InN: The effect of the band structure anisotropy, , , , , , and . INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, page 368-372. PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY, Res Ctr Julich; AIXTRON; Deutsch Forsch Gemeinsch; European Off Aerosp Res & Dev; Deutsch Gesell Kristallwachstum & Kristallzucht, WILEY-V C H VERLAG GMBH, (2002)International Workshop on Nitride Semiconductors (IWN 2002), AACHEN, GERMANY, JUL 22-25, 2002.