Article,

A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry.

, , , , , , , , , , and .
IEEE J. Solid State Circuits, 48 (1): 150-158 (2013)

Meta data

Tags

Users

  • @dblp

Comments and Reviews