Please log in to take part in the discussion (add own reviews or comments).
Cite this publication
More citation styles
- please select -
%0 Journal Article
%1 journals/jssc/KarlWNGHMKBZMB13
%A Karl, Eric
%A Wang, Yih
%A Ng, Yong-Gee
%A Guo, Zheng
%A Hamzaoglu, Fatih
%A Meterelliyoz, Mesut
%A Keane, John
%A Bhattacharya, Uddalak
%A Zhang, Kevin
%A Mistry, Kaizad
%A Bohr, Mark
%D 2013
%J IEEE J. Solid State Circuits
%K dblp
%N 1
%P 150-158
%T A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry.
%U http://dblp.uni-trier.de/db/journals/jssc/jssc48.html#KarlWNGHMKBZMB13
%V 48
@article{journals/jssc/KarlWNGHMKBZMB13,
added-at = {2021-10-14T00:00:00.000+0200},
author = {Karl, Eric and Wang, Yih and Ng, Yong-Gee and Guo, Zheng and Hamzaoglu, Fatih and Meterelliyoz, Mesut and Keane, John and Bhattacharya, Uddalak and Zhang, Kevin and Mistry, Kaizad and Bohr, Mark},
biburl = {https://www.bibsonomy.org/bibtex/2e0aafafa0bb79efca8e6e560d341111f/dblp},
ee = {https://doi.org/10.1109/JSSC.2012.2213513},
interhash = {b030a11d0c6b582ae9f15e1e16902e90},
intrahash = {e0aafafa0bb79efca8e6e560d341111f},
journal = {IEEE J. Solid State Circuits},
keywords = {dblp},
number = 1,
pages = {150-158},
timestamp = {2024-04-08T10:42:17.000+0200},
title = {A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry.},
url = {http://dblp.uni-trier.de/db/journals/jssc/jssc48.html#KarlWNGHMKBZMB13},
volume = 48,
year = 2013
}