Inproceedings,
13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate.
W. Jung, H. Kim, D. Kim, T. Kim, N. Lee, D. Shin, M. Kim, Y. Rho, H. Lee, Y. Hyun, J. Park, T. Kim, H. Kim, G. Lee, J. Lee, J. Jang, J. Park, S. Kim, S. Jeon, S. Kim, J. Song, M. Kim, T. Lee, B. Chun, T. Kim, Y. Lee, H. Lee, S. Lee, H. Lee, D. Cho, S. Nam, Y. Kim, K. Yoon, Y. Lee, S. Kim, J. Hwang, R. Song, H. Jang, J. Son, H. Jeon, M. Lee, M. Lee, K. Kim, E. Lee, M. Lee, S. Jo, C. Kim, J. Park, K. Yun, S. Seol, J. Cho, S. Lee, J. Lee, and S. Hur.ISSCC, page 236-237. IEEE, (2024)
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- inproceedings
- booktitle
- ISSCC
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- 2024
- pages
- 236-237
- publisher
- IEEE
- crossref
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- ee
- https://doi.org/10.1109/ISSCC49657.2024.10454343
- isbn
- 979-8-3503-0620-0
- url
- http://dblp.uni-trier.de/db/conf/isscc/isscc2024.html#JungKKKLSKRLHPKKLLJPKJKSKLCKLLLLCNKYL24
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- please select -%0 Conference Paper
%1 conf/isscc/JungKKKLSKRLHPKKLLJPKJKSKLCKLLLLCNKYL24
%A Jung, Wontaeck
%A Kim, Hyunggon
%A Kim, Do-Bin
%A Kim, Tae-Hyun
%A Lee, Nam-Hee
%A Shin, Dongjin
%A Kim, Minyoung
%A Rho, Youngsik
%A Lee, Hun-Jong
%A Hyun, Yujin
%A Park, Jaeyoung
%A Kim, Taekyung
%A Kim, Hwiwon
%A Lee, Gyeongwon
%A Lee, Jisang
%A Jang, Joonsuc
%A Park, Jungmin
%A Kim, Sion
%A Jeon, Su Chang
%A Kim, Suyong
%A Song, Jung-Ho
%A Kim, Min-Seok
%A Lee, Taesung
%A Chun, Byung-Kwan
%A Kim, Tongsung
%A Lee, Young Gyu
%A Lee, Hokil
%A Lee, Soowoong
%A Lee, Hwaseok
%A Cho, Dooho
%A Nam, Sangwan
%A Kim, Yeomyung
%A Yoon, Kunyong
%A Lee, Yoonjae
%A Kim, Sunghoon
%A Hwang, Jungseok
%A Song, Raehyun
%A Jang, Hyunsik
%A Son, Jae-Ick
%A Jeon, Hongsoo
%A Lee, Myunghun
%A Lee, Mookyung
%A Kim, Kisung
%A Lee, Eungsuk
%A Lee, Myeong-Woo
%A Jo, Sungkyu
%A Kim, Chan Ho
%A Park, Jong Chul
%A Yun, Kyunghwa
%A Seol, Soonock
%A Cho, Ji-Ho
%A Lee, Seungjae
%A Lee, Jin-Yub
%A Hur, SungHoi
%B ISSCC
%D 2024
%I IEEE
%K dblp
%P 236-237
%T 13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate.
%U http://dblp.uni-trier.de/db/conf/isscc/isscc2024.html#JungKKKLSKRLHPKKLLJPKJKSKLCKLLLLCNKYL24
%@ 979-8-3503-0620-0
@inproceedings{conf/isscc/JungKKKLSKRLHPKKLLJPKJKSKLCKLLLLCNKYL24,
added-at = {2024-03-19T00:00:00.000+0100},
author = {Jung, Wontaeck and Kim, Hyunggon and Kim, Do-Bin and Kim, Tae-Hyun and Lee, Nam-Hee and Shin, Dongjin and Kim, Minyoung and Rho, Youngsik and Lee, Hun-Jong and Hyun, Yujin and Park, Jaeyoung and Kim, Taekyung and Kim, Hwiwon and Lee, Gyeongwon and Lee, Jisang and Jang, Joonsuc and Park, Jungmin and Kim, Sion and Jeon, Su Chang and Kim, Suyong and Song, Jung-Ho and Kim, Min-Seok and Lee, Taesung and Chun, Byung-Kwan and Kim, Tongsung and Lee, Young Gyu and Lee, Hokil and Lee, Soowoong and Lee, Hwaseok and Cho, Dooho and Nam, Sangwan and Kim, Yeomyung and Yoon, Kunyong and Lee, Yoonjae and Kim, Sunghoon and Hwang, Jungseok and Song, Raehyun and Jang, Hyunsik and Son, Jae-Ick and Jeon, Hongsoo and Lee, Myunghun and Lee, Mookyung and Kim, Kisung and Lee, Eungsuk and Lee, Myeong-Woo and Jo, Sungkyu and Kim, Chan Ho and Park, Jong Chul and Yun, Kyunghwa and Seol, Soonock and Cho, Ji-Ho and Lee, Seungjae and Lee, Jin-Yub and Hur, SungHoi},
biburl = {https://www.bibsonomy.org/bibtex/2e621300a015112e84a2b9bbac7ae1422/dblp},
booktitle = {ISSCC},
crossref = {conf/isscc/2024},
ee = {https://doi.org/10.1109/ISSCC49657.2024.10454343},
interhash = {cde13f9ead54b55ac5935f9d49cea286},
intrahash = {e621300a015112e84a2b9bbac7ae1422},
isbn = {979-8-3503-0620-0},
keywords = {dblp},
pages = {236-237},
publisher = {IEEE},
timestamp = {2024-04-09T20:43:07.000+0200},
title = {13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate.},
url = {http://dblp.uni-trier.de/db/conf/isscc/isscc2024.html#JungKKKLSKRLHPKKLLJPKJKSKLCKLLLLCNKYL24},
year = 2024
}