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13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate., , , , , , , , , and 35 other author(s). ISSCC, page 218-220. IEEE, (2020)256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers., , , , , , , , , and 19 other author(s). IEEE J. Solid State Circuits, 52 (1): 210-217 (2017)7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate., , , , , , , , , and 35 other author(s). ISSCC, page 138-139. IEEE, (2016)7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers., , , , , , , , , and 20 other author(s). ISSCC, page 130-131. IEEE, (2016)A 159mm2 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface., , , , , , , , , and 11 other author(s). ISSCC, page 442-443. IEEE, (2010)7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip., , , , , , , , , and 20 other author(s). ISSCC, page 1-3. IEEE, (2015)11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory., , , , , , , , , and 34 other author(s). ISSCC, page 202-203. IEEE, (2017)A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory., , , , , , , , , and 20 other author(s). IEEE J. Solid State Circuits, 53 (1): 124-133 (2018)A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface., , , , , , , , , and 12 other author(s). IEEE J. Solid State Circuits, 47 (4): 981-989 (2012)Issues and Key Technologies for Next Generation 3D NAND., , , , and . ICEIC, page 1-4. IEEE, (2021)