%0 Journal Article %1 journals/jssc/GuoKNWWK19 %A Guo, Zheng %A Kim, Daeyeon %A Nalam, Satyanand %A Wiedemer, Jami %A Wang, Xiaofei %A Karl, Eric %D 2019 %J IEEE J. Solid State Circuits %K dblp %N 1 %P 210-216 %T A 23.6-Mb/mm $^2$ SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications. %U http://dblp.uni-trier.de/db/journals/jssc/jssc54.html#GuoKNWWK19 %V 54

@article{journals/jssc/GuoKNWWK19, added-at = {2020-08-30T00:00:00.000+0200}, author = {Guo, Zheng and Kim, Daeyeon and Nalam, Satyanand and Wiedemer, Jami and Wang, Xiaofei and Karl, Eric}, biburl = {https://www.bibsonomy.org/bibtex/2d813adb69c9fa1af9121be8ec78fadb5/dblp}, ee = {https://doi.org/10.1109/JSSC.2018.2861873}, interhash = {2e20582c43265952199730967d688a65}, intrahash = {d813adb69c9fa1af9121be8ec78fadb5}, journal = {IEEE J. Solid State Circuits}, keywords = {dblp}, number = 1, pages = {210-216}, timestamp = {2020-08-31T11:41:58.000+0200}, title = {A 23.6-Mb/mm $^{2}$ SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications.}, url = {http://dblp.uni-trier.de/db/journals/jssc/jssc54.html#GuoKNWWK19}, volume = 54, year = 2019 }