Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A 23.6-Mb/mm $^2$ SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications.

Z. Guo, D. Kim, S. Nalam, J. Wiedemer, X. Wang, and E. Karl. IEEE J. Solid State Circuits, 54 (1): 210-216 (2019)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Xiaofei Hao

Xiaofei Guo

Xiaofei Ji

Xiaofei Hu

Wang Wang

Other publications of authors with the same name

Multi-user Parallel Channel Access for high efficiency carrier grade wireless LANs.H. Lou, X. Wang, J. Fang, M. Ghosh, G. Zhang, and R. Olesen. ICC, page 3868-3870. IEEE, (2014)A Pseudo-Constant Frequency Constant On-Time Buck Converter With Internal Current Ripple Injection and Output DC Offset Cancellation.Q. Sun, Y. Ma, Z. Ye, X. Wang, and H. Zhang. IEEE Access, (2019)Optimizing power allocation in wireless networks: Are the implicit constraints really redundant?X. Li, X. Wang, and V. Leung. Comput. Commun., (2017)Self-organizing redundancy-cellular architecture for wireless sensor networks.X. Wang, and T. Berger. WCNC, page 1945-1951. IEEE, (2005)Cloud-assisted adaptive video streaming and social-aware video prefetching for mobile users.X. Wang, T. Kwon, Y. Choi, H. Wang, and J. Liu. IEEE Wirel. Commun., 20 (3): 1-0 (2013)QoE-Oriented Resource Optimization for Mobile Cloud Gaming: A Potential Game Approach.D. Guo, Y. Han, W. Cai, X. Wang, and V. Leung. ICC, page 1-6. IEEE, (2019)Guest Editorial Special Issue on Software Defined Networking for Internet of Things.X. Wang, Z. Sheng, H. Ma, V. Leung, and A. Jamalipour. IEEE Internet of Things Journal, 5 (3): 1347-1350 (2018)Global Adaptive Generative Adjustment.B. Wang, X. Wang, and J. Guo. CoRR, (2019)A 23.6-Mb/mm $^2$ SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications.Z. Guo, D. Kim, S. Nalam, J. Wiedemer, X. Wang, and E. Karl. IEEE J. Solid State Circuits, 54 (1): 210-216 (2019)A 0.6 V, 1.5 GHz 84 Mb SRAM in 14 nm FinFET CMOS Technology With Capacitive Charge-Sharing Write Assist Circuitry.E. Karl, Z. Guo, J. Conary, J. Miller, Y. Ng, S. Nalam, D. Kim, J. Keane, X. Wang, U. Bhattacharya and 1 other author(s). IEEE J. Solid State Circuits, 51 (1): 222-229 (2016)

BibSonomy

Disambiguation of "Wang, Xiaofei"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A 23.6-Mb/mm $^2$ SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications.

Please choose a person to relate this publication to

Xiaofei Hao

Xiaofei Guo

Xiaofei Ji

Xiaofei Hu

Wang Wang

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Wang, Xiaofei"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A 23.6-Mb/mm $^2$ SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications.

Please choose a person to relate this publication to

Xiaofei Hao

Xiaofei Guo

Xiaofei Ji

Xiaofei Hu

Wang Wang

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A 23.6-Mb/mm $^2$ SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications.