( en | de | ru )

 

Disambiguation of "Sousa, Veronique"

Author of the publication

copydeleteadd this publication to your clipboard
Innovative GeS2/Sb2Te3 based phase change memory for low power applications.

, , , , , , , , , , , , and . NVMTS, page 1-4. IEEE, (2017)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Gideon Sousa

Carlos Sousa

Ágabo Borges de Sousa

Maria Constança Dias Urbano Sousa

Valderês Aparecida Sousa

 

Other publications of authors with the same name

Innovative GeS2/Sb2Te3 based phase change memory for low power applications., , , , , , , , , and 3 other author(s). NVMTS, page 1-4. IEEE, (2017)Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption., , , , , , , , , and 9 other author(s). ESSDERC, page 286-289. IEEE, (2012)Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance., , , , , , , , , and 2 other author(s). IRPS, page 6. IEEE, (2018)Phase Change and Magnetic Memories for Solid-State Drive Applications., , , , and . Proc. IEEE, 105 (9): 1790-1811 (2017)Phase change memory for synaptic plasticity application in neuromorphic systems., , , , and . IJCNN, page 619-624. IEEE, (2011)Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements., , , , , , , and . IRPS, page 1. IEEE, (2015)High temperature reliability of μtrench Phase-Change Memory devices., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 52 (9-10): 1928-1931 (2012)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2021)Frequency modulation of conductance level in PCM device for neuromorphic applications., , , , , , , , , and . ESSCIRC, page 129-132. IEEE, (2022)