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Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors., , , , , , , , , и 4 other автор(ы). IEEE J. Solid State Circuits, 40 (9): 1922-1931 (2005)Design and Analysis of a 140-GHz T/R Front-End Module in 22-nm FD-SOI CMOS., , , , и . IEEE J. Solid State Circuits, 57 (5): 1300-1313 (2022)A Single-Channel, 600-MS/s, 12-b, Ringamp-Based Pipelined ADC in 28-nm CMOS., , , , и . IEEE J. Solid State Circuits, 54 (2): 403-416 (2019)Digital circuit capacitance and switching analysis for ground bounce in ICs with a high-ohmic substrate., , , , , , , , и . IEEE J. Solid State Circuits, 39 (7): 1119-1130 (2004)A CMOS IQ direct digital RF modulator with embedded RF FIR-based quantization noise filter., , , и . ESSCIRC, стр. 139-142. IEEE, (2011)A 54-64.8 GHz subharmonically injection-locked frequency synthesizer with transmitter EVM between -26.5 dB and -28.8 dB in 28 nm CMOS., , , , , и . ESSCIRC, стр. 243-246. IEEE, (2017)A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C., , , и . ESSCIRC, стр. 183-186. IEEE, (2014)A 6.2mW 7b 3.5GS/s time interleaved 2-stage pipelined ADC in 40nm CMOS., , , и . ESSCIRC, стр. 75-78. IEEE, (2014)An up to 36Gbps analog baseband equalizer and demodulator for mm-wave wireless communication in 28nm CMOS., , , и . CICC, стр. 1-4. IEEE, (2017)Inductor-based ESD protection under CDM-like ESD stress conditions for RF applications., , , , , , , и . CICC, стр. 49-52. IEEE, (2008)