Author of the publication

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices.

, , , , , , and . IEEE Trans. Ind. Electron., 67 (12): 10284-10294 (2020)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Characteristics and Evaluation Approaches of Human-Body-Model Electrostatic Discharge Across Schottky p-GaN Gate HEMTs., , , and . IEEE Trans. Ind. Electron., 71 (3): 3113-3121 (March 2024)Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests., , , and . IEEE Trans. Ind. Electron., 68 (9): 8798-8807 (2021)Reverse-Bias Stability and Reliability of Enhancement-mode GaN-based MIS-FET., , , , , and . ASICON, page 1-4. IEEE, (2019)Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices., , , , , , and . IEEE Trans. Ind. Electron., 67 (12): 10284-10294 (2020)Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs., , , , and . IEEE Trans. Ind. Electron., 69 (7): 7340-7348 (2022)Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs., , , , and . IEEE Trans. Ind. Electron., 69 (7): 6784-6793 (2022)E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability., , , , , , and . ASICON, page 1-4. IEEE, (2021)Comparing Machine and Human Learning in a Planning Task of Intermediate Complexity., , , and . CogSci, cognitivesciencesociety.org, (2022)