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Unveiling Retention Physical Mechanism of Ge-rich GST ePCM Technology., , , , , , , , , and 5 other author(s). IRPS, page 1-7. IEEE, (2023)An Extended Temperature Range ePCM Memory in 90-nm BCD for Smart Power Applications., , , , , , , , , and 5 other author(s). ESSCIRC, page 373-376. IEEE, (2022)2022 roadmap on neuromorphic computing and engineering., , , , , , , , , and 49 other author(s). Neuromorph. Comput. Eng., 2 (2): 22501 (2022)Characterization of reset state through energy activation study in Ge-GST based ePCM., , , , , , and . ESSDERC, page 229-232. IEEE, (2022)High Ion/Ioff ratio BJT selector for 32 cell string Resistive RAM arrays., , , , , and . ESSDERC, page 238-241. IEEE, (2014)2021 Roadmap on Neuromorphic Computing and Engineering., , , , , , , , , and 46 other author(s). CoRR, (2021)Interaction between forming pulse and integration process flow in ePCM., , , , , , and . PRIME, page 145-148. IEEE, (2022)16MB High Density Embedded PCM macrocell for automotive-grade microcontroller in 28nm FD-SOI, featuring extension to 24MB for Over-The-Air software update., , , , , , , , , and 13 other author(s). VLSI Circuits, page 1-2. IEEE, (2021)Modeling Environment for Ge-rich GST Phase Change Memory Cells., , , , , , , and . IMW, page 1-4. IEEE, (2022)ePCM reliability improvement through active material carbon implantation., , , , , , , , and . ESSDERC, page 29-32. IEEE, (2023)