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Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures., , , and . ISOCC, page 182-183. IEEE, (2019)Characteristics of Ni/AlOx/Pt RRAM devices with various dielectric fabrication temperatures., , , , , , , , and . ICICDT, page 1-4. IEEE, (2019)Bionic Sypantic Application of OxRRAM Devices., , , and . ISOCC, page 163-164. IEEE, (2020)Neuromorphic Properties of Memristor towards Artificial Intelligence., , , , , , and . ISOCC, page 172-173. IEEE, (2018)Emerging Optical In-Memory Computing Sensor Synapses Based on Low-Dimensional Nanomaterials for Neuromorphic Networks., , , , , , , , , and . Adv. Intell. Syst., (2022)Research on Two-dimensional MXenes Based Synaptic Devices for the Future In-memory Computing., , , , , , , , and . ASICON, page 1-4. IEEE, (2021)Long-Term Memory Performance with Learning Behavior of Artificial Synaptic Memristor Based on Stacked Solution-Processed Switching Layers., , , , and . ISCAS, page 1-4. IEEE, (2021)Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers., , , , , and . ICICDT, page 1-4. IEEE, (2021)Artificial synaptic behavior and its improvement of RRAM device with stacked solution-processed MXene layers., , , , and . ISOCC, page 187-188. IEEE, (2021)