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InP DHBT Based IC Technology for over 80 Gbit/s Data Communications., , , , , , , , и . IEICE Trans. Electron., 89-C (7): 931-936 (2006)Reliability of 70 nm metamorphic HEMTs., , , , , , и . Microelectron. Reliab., 44 (6): 939-943 (2004)Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems., , , , , , , , , и 6 other автор(ы). Microelectron. Reliab., 49 (5): 474-477 (2009)Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz., , , , , и . IEICE Trans. Electron., 93-C (8): 1238-1244 (2010)InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s., , , , , , , и . IEEE J. Solid State Circuits, 41 (10): 2215-2223 (2006)Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices., , , , , , , , и . Microelectron. Reliab., 54 (12): 2656-2661 (2014)Degradation of 0.25 μm GaN HEMTs under high temperature stress test., , , , , , , , , и 4 other автор(ы). Microelectron. Reliab., 55 (9-10): 1667-1671 (2015)High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs., , , , , , , , и . IRPS, стр. 2. IEEE, (2015)A 4-W X-band compact coplanar high-power amplifier MMIC with 18-dB gain and 25% PAE., , , , и . IEEE J. Solid State Circuits, 38 (9): 1433-1437 (2003)Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications., , , , , , , , и . Microelectron. Reliab., (2017)