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A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement.

X. Han, Q. Jia, H. Sun, L. Wang, H. Wu, Y. Cai, F. Zhang, Y. Xie, F. Dong, X. Wang, X. Xue, L. Pang, X. Zhao, M. Wu, P. Bai, Q. Liu, H. Lv, B. Yu, C. Zhao, H. Qian, R. Huang, M. Liu, Y. Zhou, N. Zheng, and Q. Ren. CICC, page 1-4. IEEE, (2017)

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Huaqiang Luo

Huaqiang Shu

Jinglan Wu

Recovery of citric acid from fermentation broth using simulated moving bed technology: = Reinigung von Zitronensäure aus Fermentationslösung durch kontinuierliche ChromatographieJ. Wu. Uni Erlangen-Nürnberg, (2009)

Yinghua Wu

Jinjin Wu

Other publications of authors with the same name

Neuromorphic Computing based on Resistive RAM.Z. Chen, H. Wu, B. Gao, P. Yao, X. Li, and H. Qian. ACM Great Lakes Symposium on VLSI, page 311-315. ACM, (2017)On-Chip Analog Trojan Detection Framework for Microprocessor Trustworthiness.Y. Hou, H. He, K. Shamsi, Y. Jin, D. Wu, and H. Wu. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 38 (10): 1820-1830 (2019)Architecture-circuit-technology co-optimization for resistive random access memory-based computation-in-memory chips.Y. Liu, B. Gao, J. Tang, H. Wu, and H. Qian. Sci. China Inf. Sci., (October 2023)The effect of variation on neuromorphic network based on 1T1R memristor array.P. Yao, H. Wu, B. Gao, G. Zhang, and H. Qian. NVMTS, page 1-3. IEEE, (2015)New structure with SiO2-gate-dielectric select gates in vertical-channel three-dimensional (3D) NAND flash memory.B. Wang, B. Gao, H. Wu, and H. Qian. Microelectron. Reliab., (2017)A Highly Reliable RRAM Physically Unclonable Function Utilizing Post-Process Randomness Source.B. Lin, Y. Pang, B. Gao, J. Tang, D. Wu, T. Chang, W. Lin, X. Sun, S. Yu, M. Chang and 2 other author(s). IEEE J. Solid State Circuits, 56 (5): 1641-1650 (2021)Synaptic learning behaviors achieved by metal ion migration in a Cu/PEDOT: PSS/Ta memristor.W. Luo, F. Yuan, H. Wu, L. Pan, N. Deng, F. Zeng, R. Wei, and X. Cai. NVMTS, page 1-4. IEEE, (2015)3.2 A 0.028mm² 32MHz RC Frequency Reference in 0.18μm CMOS with ±900ppm Inaccuracy from -40°C to 125°C and ±1600ppm Inaccuracy After Accelerated Aging.S. Pan, Y. Cheng, G. Wu, Z. Wang, K. Makinwa, and H. Wu. ISSCC, page 56-58. IEEE, (2024)Reliability Perspective on Neuromorphic Computing Based on Analog RRAM.H. Wu, M. Zhao, Y. Liu, P. Yao, Y. Xi, X. Li, W. Wu, Q. Zhang, J. Tang, B. Gao and 1 other author(s). IRPS, page 1-4. IEEE, (2019)A 16 Mb RRAM test chip based on analog power system with tunable write pulses.X. Ma, H. Wu, D. Wu, and H. Qian. NVMTS, page 1-3. IEEE, (2015)

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Disambiguation of "Wu, Huaqiang"

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A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement.

Please choose a person to relate this publication to

Huaqiang Luo

Huaqiang Shu

Jinglan Wu

Yinghua Wu

Jinjin Wu

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Wu, Huaqiang"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement.

Please choose a person to relate this publication to

Huaqiang Luo

Huaqiang Shu

Jinglan Wu

Yinghua Wu

Jinjin Wu

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement.