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Si multilayer growth and interfacial effects on silicon quantum well confinement properties

E. da Silva, E. de Vasconcelos, B. Stosic, J. de Sousa, G. Farias, и V. Freire. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 74 (1-3): 188-192 (2000)3rd International Conference on Low Dimensional Structures and Devices (LDSD 99), ANTALYA, TURKEY, SEP 15-17, 1999.
DOI: 10.1016/S0921-5107(99)00559-0

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Kerstin da Silva

Rodrigo Corrêa da Silva

Adriano João Da Silva

Carolina Ferraz da Silva

Antonio Da Silva Mello

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The role of multiple damaged layers at the Si/SiO2 interface on the dielectric breakdown of MOS capacitorsS. Sombra, U. Costa, V. Freire, E. de Vasconcelos, и E. da Silva. APPLIED SURFACE SCIENCE, 190 (1-4): 35-38 (2002)8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001.Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wellsF. Maia, J. Freire, G. Farias, V. Freire, и E. da Silva. APPLIED SURFACE SCIENCE, 190 (1-4): 247-251 (2002)8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001.High-temperature effects on the velocity overshoot of hot electrons in 6H-and 3C-SiCE. Bezerra, E. Caetano, V. Freire, E. da Silva, и J. da Costa. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 14 (11): 1007-1011 (1999)Effect of ageing on x-ray induced dopant passivation in MOS capacitorsE. de Vasconcelos, E. da Silva, H. Khoury, и V. Freire. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 15 (8): 794-798 (2000)Ultrafast electron drift velocity overshoot in 3C-SiCE. Caetano, E. Bezerra, V. Freire, J. da Costa, и E. da Silva. SOLID STATE COMMUNICATIONS, 113 (9): 539-542 (2000)Statistical analysis of topographic images of nanoporous silicon and model surfacesJ. da Silva, E. de Vasconcelos, B. dos Santos, J. Freire, V. Freire, G. Farias, и E. da Silva. MICROELECTRONICS JOURNAL, 36 (11, SI): 1011-1015 (2005)4th Workshop on Semiconductor Nanodevices and Nanostructured Materials, Sao Pedro, BRAZIL, MAR 09-13, 2005.Intraband absorption in silicon nanocrystals: The combined effect of shape and crystal orientationJ. de Sousa, J. Leburton, V. Freire, и E. da Silva. APPLIED PHYSICS LETTERS, (2005)Feasibility of IR-to-UV detection in SiC/SiO2 heterostructuresJ. de Sousa, V. Freire, и E. da Silva. QUANTUM SENSING AND NANOPHOTONIC DEVICES II, том 5732 из Proceedings of SPIE, стр. 530-537. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA, SPIE, SPIE-INT SOC OPTICAL ENGINEERING, (2005)Conference on Quantum Sensing and Nanophotonic Devices II, San Jose, CA, JAN 23-27, 2005.Strong exciton energy blue shift in annealed Si/SiO2 single quantum wellsJ. de Sousa, H. Wang, G. Farias, V. Freire, и E. da Silva. APPLIED SURFACE SCIENCE, 166 (1-4): 469-474 (2000)7th International Conference on the Formation of Semiconductor Interfaces (ICFSI-7), GOTHENBURG, SWEDEN, JUN 21-25, 1999.Blue and red Stark shifts in single Si/SiO2 quantum wellsJ. Sousa, G. Farias, V. Freire, и E. da Silva. SUPERLATTICES AND MICROSTRUCTURES, 25 (1-2): 377-381 (1999)11th International Conference on Superlattices, Microstructures and Microdevices (ICSMM-11), HURGADA, EGYPT, JUL 27-31, 1998.

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