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Disambiguation of "Arimura, Hiroaki"

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Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.

, , , , , , , , , , , , , , , , , and . ESSDERC, page 190-193. IEEE, (2013)

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Hiroaki Kobayashi

Hiroaki Tanaka

 

Other publications of authors with the same name

Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails., , , , , , , , , and 34 other author(s). VLSI Technology and Circuits, page 284-285. IEEE, (2022)Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections., , , , , , , , , and 15 other author(s). VLSI Technology and Circuits, page 330-331. IEEE, (2022)Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics., , , , , , , , , and . IRPS, page 36. IEEE, (2024)Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper., , , , , , , , , and 3 other author(s). ICICDT, page 1-4. IEEE, (2021)Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions., , , , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors., , , , , , , , , and 8 other author(s). ESSDERC, page 190-193. IEEE, (2013)Beyond-Si materials and devices for more Moore and more than Moore applications., , , , , , , , , and 16 other author(s). ICICDT, page 1-5. IEEE, (2016)Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET., , , , , , , , , and 11 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with VTH Tunability for Future Memories., , , , , , , , , and 12 other author(s). VLSI Technology and Circuits, page 306-307. IEEE, (2022)