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Fully Single Event Double Node Upset Tolerant Design for Magnetic Random Access Memory.

D. Zhang, X. Wang, K. Zhang, L. Zeng, Y. Wang, B. Wang, E. Deng, C. Wang, P. Wu, Y. Zhang, and W. Zhao. ISCAS, page 1-5. IEEE, (2021)

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Hussain Eryani

Husam Abdullah Anas al- Eryani

Susanne al- Eryani

Aysel Eryasar

Zhiguo Deng

Other publications of authors with the same name

A Novel Multi-Context Non-Volatile Content-Addressable Memory Cell and Multi-Level Architecture for High Reliability and Density.X. Wang, D. Zhang, K. Zhang, E. Deng, Y. Wang, and W. Zhao. NVMSA, page 1-6. IEEE, (2021)Fully Single Event Double Node Upset Tolerant Design for Magnetic Random Access Memory.D. Zhang, X. Wang, K. Zhang, L. Zeng, Y. Wang, B. Wang, E. Deng, C. Wang, P. Wu, Y. Zhang and 1 other author(s). ISCAS, page 1-5. IEEE, (2021)Robust magnetic full-adder with voltage sensing 2T/2MTJ cell.E. Deng, Y. Wang, Z. Wang, J. Klein, B. Dieny, G. Prenat, and W. Zhao. NANOARCH, page 27-32. IEEE Computer Society, (2015)Multi-context non-volatile content addressable memory using magnetic tunnel junctions.E. Deng, L. Anghel, G. Prenat, and W. Zhao. NANOARCH, page 103-108. ACM, (2016)Ultra Low Power Magnetic Flip-Flop Based on Checkpointing/Power Gating and Self-Enable Mechanisms.D. Chabi, W. Zhao, E. Deng, Y. Zhang, N. Romdhane, J. Klein, and C. Chappert. IEEE Trans. Circuits Syst. I Regul. Pap., 61-I (6): 1755-1765 (2014)Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses.Y. Wang, Y. Zhang, E. Deng, J. Klein, L. Naviner, and W. Zhao. Microelectron. Reliab., 54 (9-10): 1774-1778 (2014)HSC: A Hybrid Spin/CMOS Logic Based In-Memory Engine with Area-Efficient Mapping Strategy.Y. Huang, E. Deng, J. Bai, Q. Yang, W. Kang, and B. Pan. ISCAS, page 1-5. IEEE, (2021)Spin-Orbit Torque Nonvolatile Flip-Flop Designs.E. Deng, W. Kang, W. Zhao, S. Wei, Y. Wang, and D. Zhang. ISCAS, page 1-5. IEEE, (2021)High-Density and Fast-Configuration Non-Volatile Look-Up Table Based on NAND-Like Spintronic Memory.H. Zhang, W. Kang, Z. Wang, E. Deng, Y. Zhang, and W. Zhao. APCCAS, page 382-385. IEEE, (2018)A Novel MTJ-Based Non-Volatile Ternary Content-Addressable Memory for High-Speed, Low-Power, and High-Reliable Search Operation.C. Wang, D. Zhang, L. Zeng, E. Deng, J. Chen, and W. Zhao. IEEE Trans. Circuits Syst. I Regul. Pap., 66-I (4): 1454-1464 (2019)

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Disambiguation of "Deng, Erya"

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Fully Single Event Double Node Upset Tolerant Design for Magnetic Random Access Memory.

Please choose a person to relate this publication to

Hussain Eryani

Husam Abdullah Anas al- Eryani

Susanne al- Eryani

Aysel Eryasar

Zhiguo Deng

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Deng, Erya"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Fully Single Event Double Node Upset Tolerant Design for Magnetic Random Access Memory.

Please choose a person to relate this publication to

Hussain Eryani

Husam Abdullah Anas al- Eryani

Susanne al- Eryani

Aysel Eryasar

Zhiguo Deng

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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Fully Single Event Double Node Upset Tolerant Design for Magnetic Random Access Memory.