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From Charge to Spin and Spin to Charge: Stochastic Magnets for Probabilistic Switching.

, , , , , , , and . Proc. IEEE, 108 (8): 1322-1337 (2020)

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About the interplay between contact and channel resistance in MoS2 and its impact on mobility extraction., and . DRC, page 135-136. IEEE, (2019)Nanowire electronics.. ESSCIRC, page 73-75. IEEE, (2009)Thickness Tunable Transport Properties in MoTe2 Field Effect Transistors., , and . DRC, page 1-2. IEEE, (2018)High Performance Complementary Black Phosphorus FETs and Inverter Circuits Operating at Record-Low VDD down to 0.2V., and . DRC, page 1-2. IEEE, (2018)Carbon Nanotubes for High-Performance Electronics - Progress and Prospect.. Proc. IEEE, 96 (2): 201-211 (2008)Carbon nanotube electronics., , , and . Proc. IEEE, 91 (11): 1772-1784 (2003)Three-Dimensional Integration of Multi-Channel MoS2 Devices for High Drive Current FETs., and . DRC, page 1-2. IEEE, (2018)From Charge to Spin and Spin to Charge: Stochastic Magnets for Probabilistic Switching., , , , , , , and . Proc. IEEE, 108 (8): 1322-1337 (2020)Experimental demonstration of an integrated on-chip p-bit core utilizing stochastic Magnetic Tunnel Junctions and 2D-MoS2 FETs., , , , , , and . CoRR, (2023)A mobility study of monolayer MoS2 on low-κ/high-κ dielectrics., , , , and . DRC, page 1-2. IEEE, (2023)