Author of the publication

SLC and MLC In-Memory-Approximate-Search Solutions in Commercial 48-layer and 96-layer 3D-NAND Flash Memories.

, , , , , , , , , , and . IMW, page 1-4. IEEE, (2023)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

In-Memory Approximate Computing Architecture Based on 3D-NAND Flash Memories., , , , , , , , and . VLSI Technology and Circuits, page 270-271. IEEE, (2022)First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures., , , , , , , and . IRPS, page 7. IEEE, (2022)Introduction of Non-Volatile Computing In Memory (nvCIM) by 3D NAND Flash for Inference Accelerator of Deep Neural Network (DNN) and the Read Disturb Reliability Evaluation : (Invited Paper)., , , and . IRPS, page 1-6. IEEE, (2020)A packaged broad-band monolithic variable gain amplifier implemented in AlGaAs/GaAs HBT technology., , , , , , and . IEEE J. Solid State Circuits, 31 (10): 1380-1387 (1996)A 10-Gb/s high-isolation, 16×16 crosspoint switch implemented with AlGaAs/GaAs HBT's., , , , , and . IEEE J. Solid State Circuits, 35 (4): 593-600 (2000)Write-In-Place Operation and It's Advantages to Upgrade the 3D AND-type Flash Memory Performances., , , , , and . IMW, page 1-4. IEEE, (2021)A Simulation Study of Scaling Capability toward 10nm for the 3D Stackable Gate-Controlled Thyristor (GCT) DRAM Device., , , , and . IMW, page 1-4. IEEE, (2023)SLC and MLC In-Memory-Approximate-Search Solutions in Commercial 48-layer and 96-layer 3D-NAND Flash Memories., , , , , , , , , and 1 other author(s). IMW, page 1-4. IEEE, (2023)NOR Flash-based Multilevel In-Memory-Searching Architecture for Approximate Computing., , , , , , , and . IMW, page 1-4. IEEE, (2022)A 512Gb In-Memory-Computing 3D-NAND Flash Supporting Similar-Vector-Matching Operations on Edge-AI Devices., , , , , , , , , and 9 other author(s). ISSCC, page 138-140. IEEE, (2022)