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Tunneling Transistors Based on Graphene and 2-D Crystals.. Proc. IEEE, 101 (7): 1585-1602 (2013)Large Signal Response of AlN/GaN/AlN HEMTs at 30 GHz., , , , , , , , and . DRC, page 1-2. IEEE, (2021)Degradation of GaN-on-GaN vertical diodes submitted to high current stress., , , , , , , , , and 1 other author(s). Microelectron. Reliab., (2018)Field-plated Ga2O3 Trench Schottky Barrier Diodes with a Record High Figure-of-merit of 0.78 GW/cm2., , , , and . DRC, page 209-210. IEEE, (2019)Energy-Efficient Clocking Based on Resonant Switching for Low-Power Computation., , and . IEEE Trans. Circuits Syst. I Regul. Pap., 61-I (5): 1400-1408 (2014)First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates., , , , , , , and . DRC, page 1-2. IEEE, (2022)Graphene nanoribbon FETs for digital electronics: experiment and modeling., , and . I. J. Circuit Theory and Applications, 41 (6): 603-607 (2013)Barrier Height Stability and Reverse Leakage Mechanisms in Ni/Ga2O3 (001) Schottky Barrier Diodes., , , , and . DRC, page 159-160. IEEE, (2019)Buried tunnel junction for p-down nitride laser diodes., , , , , , , , , and 1 other author(s). DRC, page 241-242. IEEE, (2019)In Quest of the Next Information Processing Substrate: Extended Abstract: Invited., , , , , , , , , and 2 other author(s). DAC, page 17:1-17:6. ACM, (2017)