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Investigation of Hot Carrier Enhanced Body Bias Effect in Advanced FinFET Technology.

, , , , , , , , and . IRPS, page 1-6. IEEE, (2023)

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Design for reliability with the advanced integrated circuit (IC) technology: challenges and opportunities., , and . Sci. China Inf. Sci., 62 (12): 226401 (2019)"Shift and Match" (S...M) method for channel mobility correction in degraded MOSFETs., , , and . IRPS, page 1-8. IEEE, (2020)An Assessment of the Statistical Distribution of Random Telegraph Noise Time Constants., , , , , , and . IEEE Access, (2020)Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors., , and . Sci. China Inf. Sci., 65 (8): 1-2 (2022)New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology., , , , , , , and . IRPS, page 6. IEEE, (2022)Towards the Characterization of Full ID-VG Degradation in Transistors for Future Analog Applications., , , , , and . IRPS, page 3. IEEE, (2022)Voltage step stress: a technique for reducing test time of device ageing., , , , and . ICICDT, page 1-4. IEEE, (2019)Evaluate the Selection of Logistics Centre Location Using SVM Based on Principal Component Analysis., , and . PACCS, page 661-664. IEEE Computer Society, (2009)Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs., , , , , , , and . IRPS, page 1-6. IEEE, (2020)ESD characterization of planar InGaAs devices., , , , , , , , , and 7 other author(s). IRPS, page 3. IEEE, (2015)