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Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems., , , , , , , , , and 6 other author(s). Microelectron. Reliab., 49 (5): 474-477 (2009)Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz., , , , , , , , , and 2 other author(s). IEEE J. Solid State Circuits, 46 (10): 2193-2202 (2011)Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 43 (10): 2194-2205 (2008)Wireless communications on THz carriers takes shape., , , , , , , , , and 6 other author(s). ICTON, page 1-4. IEEE, (2014)100 Gbit/s wireless link with mm-wave photonics., , , , , , , , , and 4 other author(s). OFC/NFOEC, page 1-3. IEEE, (2013)Spectroscopic Measurement of Material Properties Using an Improved Millimeter-Wave Ellipsometer Based on Metallic Substrates., , , , , and . IEEE Trans. Instrumentation and Measurement, 65 (11): 2551-2559 (2016)Study on data transmission of complex modulated signals using an MMIC-based 220 GHz wireless link., , , , , and . ISSSE, page 1-4. IEEE, (2012)Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress., , , , , , , and . IRPS, page 1-6. IEEE, (2020)Building Blocks for GaN Power Integration., , , , , , , and . IEEE Access, (2021)Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs., , , , , , and . Microelectron. Reliab., 51 (2): 224-228 (2011)