Author of the publication

A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35 µm SiGe HBT Technology.

, , , and . IEICE Trans. Electron., 88-C (6): 1267-1270 (2005)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35 µm SiGe HBT Technology., , , and . IEICE Trans. Electron., 88-C (6): 1267-1270 (2005)Analytical Noise Optimization of Single-/Dual-Band MOS LNAs With Substrate and Metal Loss Effects of Inductors., , , , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 66-I (7): 2454-2467 (2019)High LO-to-RF isolation wideband gilbert upconversion micromixer using a phase-inverter rat-race coupler in 0.35µm SiGe HBT technology., , and . RWS, page 447-450. IEEE, (2012)pHEMT Single-Voltage-Supply Direct-Conversion Receiver With a 3-10 GHz LC Ladder LNA., , , and . RWS, page 1-3. IEEE, (2019)Determining GaInP/GaAs HBT Device Structure by DC Measurements on a Two-Emitter HBT Device and High Frequency Transit Time Measurements., , and . IEICE Trans. Electron., 88-C (6): 1127-1132 (2005)Analysis and Design of the 0.13- muhboxm CMOS Shunt-Series Series-Shunt Dual-Feedback Amplifier., , and . IEEE Trans. Circuits Syst. I Regul. Pap., 56-I (11): 2373-2383 (2009)True 50% Duty-Cycle SSH and SHH SiGe BiCMOS Divide-by-3 Prescalers., , and . IEICE Trans. Electron., 89-C (6): 725-731 (2006)10-GHz SiGe BiCMOS Sub-Harmonic Gilbert Mixer Using the Fully Symmetrical and Time-Delay Compensated LO Cells., and . IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 90-A (2): 326-332 (2007)4-GHz Inter-Stage-Matched SiGe HBT LNA with Gain Enhancement and No Noise Figure Degradation., and . IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 90-A (2): 398-400 (2007)The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices., , , and . IEICE Trans. Electron., 89-C (4): 520-523 (2006)