Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states., , , , , , , , , and 1 other author(s). DRC, page 1-2. IEEE, (2022)A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights., , , , , , , and . CoRR, (2020)A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory., , , , , , , , and . CoRR, (2023)Scaling ferroelectric HZO thickness for low power Ge MFS-FTJ memories., , , , , and . ESSDERC, page 287-290. IEEE, (2021)A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory., , , , , , , , and . CoRR, (2023)High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor., , , , , and . CoRR, (2023)Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights., , , , , , , , , and 1 other author(s). Neuromorph. Comput. Eng., 2 (2): 24001 (2022)A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory., , , , , , , , and . IMW, page 1-4. IEEE, (2021)High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor., , , , , and . ESSCIRC, page 87-90. IEEE, (2021)