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The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release.

, , , , , and . IRPS, page 1-6. IEEE, (2020)

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Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling., , , , , , , , , and . IRPS, page 1-7. IEEE, (2019)Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors., , , , , , , , , and 1 other author(s). IRPS, page 2. IEEE, (2018)Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures., , , , , , , , and . IRPS, page 1-6. IEEE, (2020)Comphy - A compact-physics framework for unified modeling of BTI., , , , , , , , , and 4 other author(s). Microelectron. Reliab., (2018)A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics., , , , , , , , and . IMW, page 1-4. IEEE, (2021)Physical modeling of the hysteresis in M0S2 transistors., , , , , , , , , and . ESSDERC, page 284-287. IEEE, (2017)Characterization and modeling of charge trapping: From single defects to devices., , , , , , , , and . ICICDT, page 1-4. IEEE, (2014)The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release., , , , , and . IRPS, page 1-6. IEEE, (2020)A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability., , , , , , , , , and 4 other author(s). Microelectron. Reliab., (2018)Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence., , , , , , and . Microelectron. Reliab., (2018)