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Millimeter-Wave GaN Device Modeling for Power Amplifiers., , , and . DRC, page 1-2. IEEE, (2020)X-Band GaN Chipsets for Cost-Effective 20W T/R Modules., , , , , , and . IEICE Trans. Electron., 105-C (5): 194-202 (2022)Highly integrated RF frontend module for high SHF wide-band massive MIMO in 5G, and switching-mode amplifiers beyond 4G., , , , , , , and . VLSI-DAT, page 1-4. IEEE, (2017)A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications., , and . BCICTS, page 1-4. IEEE, (2020)Overview and Prospects of High Power Amplifier Technology Trend for 5G and beyond 5G Base Stations., , , , , and . IEICE Trans. Electron., 104-C (10): 526-533 (2021)Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement., , , , and . BCICTS, page 48-51. IEEE, (2018)Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation., , , and . BCICTS, page 1-4. IEEE, (2019)On-Chip Temperature Compensation Active Bias Circuit Having Tunable Temperature Slope for GaAs FET MMIC PA., , , , and . IEICE Trans. Electron., 94-C (10): 1498-1507 (2011)Analog Pre-Distortion Linearizer Using Self Base Bias Controlled Amplifier., , , , and . IEICE Trans. Electron., 93-C (7): 966-974 (2010)A Compact RF Frontend Module of Active Phased Array Antenna for High SHF Wideband Massive MIMO in 5G., , , , , , , and . IEICE Trans. Electron., 100-C (10): 818-824 (2017)