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Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature., , , , , , , и . IEEE Access, (2020)An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs., , , , , , и . IEEE Access, (2022)Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs., , , , , , , , и . IRPS, стр. 1. IEEE, (2018)Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light., , , , , , , , и . Sci. China Inf. Sci., (февраля 2023)Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress., , , , , , и . Microelectron. Reliab., 54 (6-7): 1293-1298 (2014)Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method., , , , , , , , , и . Sci. China Inf. Sci., (2022)Contribution to Transfer Entropy Estimation via the k-Nearest-Neighbors Approach., , , и . Entropy, 17 (6): 4173-4201 (2015)Research on ELM Soft Fault Diagnosis of Analog Circuit Based on KSLPP Feature Extraction., , , , и . IEEE Access, (2019)A Novel Method for Rapid Speaker Adaptation Based on Support Speaker Weighting., и . ICASSP (1), стр. 993-996. IEEE, (2005)Composite heuristic algorithm for permutation flowshop scheduling problems with total flowtime minimization., , , и . CSCWD, стр. 903-907. IEEE, (2008)