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OMI/TMI-based Modeling and Fast Simulation of Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits., , , , , , and . ASICON, page 1-4. IEEE, (2019)Realization of Nanoscale Neuromorphic Memristor Array with Low Power Consumption., , , , , , , and . ASICON, page 1-4. IEEE, (2019)A 3D multi-layer CMOS-RRAM accelerator for neural network., , , , , , and . 3DIC, page 1-5. IEEE, (2016)New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology., , , , , , , , , and 3 other author(s). IRPS, page 3-1. IEEE, (2018)Resistance switching for RRAM applications., , , , , , , , , and 4 other author(s). Sci. China Inf. Sci., 54 (5): 1073-1086 (2011)Neuromorphic Devices and Networks Based on Memristors with Ionic Dynamics., , and . Handbook of Memristor Networks, Springer, (2019)DaSGD: Squeezing SGD Parallelization Performance in Distributed Training Using Delayed Averaging., , , , , , and . CoRR, (2020)Challenges of 22 nm and beyond CMOS technology., , , , , , , , , and 1 other author(s). Sci. China Ser. F Inf. Sci., 52 (9): 1491-1533 (2009)Evaluation of SRAM Vmin shift induced by random telegraph noise (RTN): physical understanding and prediction method., , , , , and . ISCAS, page 1-4. IEEE, (2018)Recursive integral method with Cayley transformation., , and . Numerical Lin. Alg. with Applic., (2018)