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Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks., , , , , , , и . ISCAS, стр. 1-5. IEEE, (2018)Time complexity of in-memory solution of linear systems., , , , , и . CoRR, (2020)Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM)., , и . IRPS, стр. 1-8. IEEE, (2021)A Volatile RRAM Synapse for Neuromorphic Computing., , , , , , , , , и . ICECS, стр. 903-906. IEEE, (2019)Investigation of First Fire Effect on VTH Stability and Endurance in GeCTe Selector., , , , , , , , , и . IRPS, стр. 4. IEEE, (2022)In-Memory Eigenvector Computation in Time O (1)., , , , и . Adv. Intell. Syst., 2 (8): 2000042 (2020)Characterization of resistive switching devices for memory and computing.. Polytechnic University of Milan, Italy, (2020)Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage., , , , и . ESSDERC, стр. 126-129. IEEE, (2019)In-memory solution of linear systems with crosspoint arrays without iterations., , , , , и . DRC, стр. 215-216. IEEE, (2019)A New Ramp Stress Reliability Assessment on Pulse Energy Based OTS Switching Operation., , , , , , , , и . IRPS, стр. 1-5. IEEE, (2023)