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A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity.

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Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- $\mu$ A Sensing Resolution, and 17.5-nS Read Access Time., , , , , , , , , and 2 other author(s). IEEE J. Solid State Circuits, 54 (4): 1029-1038 (2019)An 89TOPS/W and 16.3TOPS/mm2 All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications., , , , , , , , , and 10 other author(s). ISSCC, page 252-254. IEEE, (2021)13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference., , , , , , , , , and 2 other author(s). ISSCC, page 222-224. IEEE, (2020)Logic Process Compatible 40NM 16MB, Embedded Perpendicular-MRAM with Hybrid-Resistance Reference, Sub-μA Sensing Resolution, and 17.5NS Read Access Time., , , , , , , , , and 2 other author(s). VLSI Circuits, page 79-80. IEEE, (2018)A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity., , , , , , , , , and 8 other author(s). ISSCC, page 494-495. IEEE, (2023)