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Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices., , , , , , , , , и 3 other автор(ы). IRPS, стр. 1-4. IEEE, (2021)RTN and LFN Noise Performance in Advanced FDSOI Technology., , , , , , , , , и 2 other автор(ы). ESSDERC, стр. 254-257. IEEE, (2018)Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination., , , , , , , , , и 4 other автор(ы). IMW, стр. 1-4. IEEE, (2022)Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications., , , , , , , , , и 3 other автор(ы). ICICDT, стр. 8-11. IEEE, (2022)Low-frequency noise in bare SOI wafers: Experiments and model., , , и . ESSDERC, стр. 286-289. IEEE, (2015)22FDX® fMAX Optimization through Parasitics Reduction and GM Boost., , , , , , , , , и 8 other автор(ы). ESSDERC, стр. 166-169. IEEE, (2019)Low-Frequency Noise Reduction in 22FDX®: Impact of Device Geometry and Back Bias., , , , , , , , и . IRPS, стр. 1-5. IEEE, (2019)Impact of Electrical Defects located at Transistor Periphery on Analog and RTN Device Performance., , , , , , , , , и 2 other автор(ы). IRPS, стр. 59-1. IEEE, (2022)