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%0 Journal Article
%1 journals/ieicet/ChoiPPLYCK10
%A Choi, Soo-Han
%A Park, Young Hee
%A Park, Chul-Hong
%A Lee, Sang Hoon
%A Yoo, Moon-Hyun
%A Cho, Jun Dong
%A Kim, Gyu Tae
%D 2010
%J IEICE Trans. Electron.
%K dblp
%N 5
%P 658-661
%T Suppression of Edge Effects Based on Analytic Model for Leakage Current Reduction of Sub-40 nm DRAM Device.
%U http://dblp.uni-trier.de/db/journals/ieicet/ieicet93c.html#ChoiPPLYCK10
%V 93-C
@article{journals/ieicet/ChoiPPLYCK10,
added-at = {2020-10-26T00:00:00.000+0100},
author = {Choi, Soo-Han and Park, Young Hee and Park, Chul-Hong and Lee, Sang Hoon and Yoo, Moon-Hyun and Cho, Jun Dong and Kim, Gyu Tae},
biburl = {https://www.bibsonomy.org/bibtex/2812ecabb29ed17275a70fcedb99713c8/dblp},
ee = {http://search.ieice.org/bin/summary.php?id=e93-c_5_658},
interhash = {05561cd9d2db66457d06707b82e49d89},
intrahash = {812ecabb29ed17275a70fcedb99713c8},
journal = {IEICE Trans. Electron.},
keywords = {dblp},
number = 5,
pages = {658-661},
timestamp = {2020-10-27T12:01:51.000+0100},
title = {Suppression of Edge Effects Based on Analytic Model for Leakage Current Reduction of Sub-40 nm DRAM Device.},
url = {http://dblp.uni-trier.de/db/journals/ieicet/ieicet93c.html#ChoiPPLYCK10},
volume = {93-C},
year = 2010
}
