Inproceedings,
Key parameters driving transistor degradation in advanced strained SiGe channels.
V. Huard, C. Ndiaye, M. Arabi, N. Parihar, X. Federspiel, S. Mhira, S. Mahapatra, and A. Bravaix.IRPS, page 4-1. IEEE, (2018)
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- conf/irps/HuardNAPFMMB18
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- inproceedings
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- IRPS
- year
- 2018
- pages
- 4-1
- publisher
- IEEE
- crossref
- conf/irps/2018
- ee
- https://doi.org/10.1109/IRPS.2018.8353699
- isbn
- 978-1-5386-5479-8
- url
- http://dblp.uni-trier.de/db/conf/irps/irps2018.html#HuardNAPFMMB18
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%1 conf/irps/HuardNAPFMMB18
%A Huard, Vincent
%A Ndiaye, Cheikh
%A Arabi, M.
%A Parihar, Narendra
%A Federspiel, X.
%A Mhira, Souhir
%A Mahapatra, S.
%A Bravaix, Alain
%B IRPS
%D 2018
%I IEEE
%K dblp
%P 4-1
%T Key parameters driving transistor degradation in advanced strained SiGe channels.
%U http://dblp.uni-trier.de/db/conf/irps/irps2018.html#HuardNAPFMMB18
%@ 978-1-5386-5479-8
@inproceedings{conf/irps/HuardNAPFMMB18,
added-at = {2023-09-30T00:00:00.000+0200},
author = {Huard, Vincent and Ndiaye, Cheikh and Arabi, M. and Parihar, Narendra and Federspiel, X. and Mhira, Souhir and Mahapatra, S. and Bravaix, Alain},
biburl = {https://www.bibsonomy.org/bibtex/263cfd68cc257d4b0ecfd3a71b4457ddc/dblp},
booktitle = {IRPS},
crossref = {conf/irps/2018},
ee = {https://doi.org/10.1109/IRPS.2018.8353699},
interhash = {40c96e797af0c6419e6823796d3c4a8c},
intrahash = {63cfd68cc257d4b0ecfd3a71b4457ddc},
isbn = {978-1-5386-5479-8},
keywords = {dblp},
pages = {4-1},
publisher = {IEEE},
timestamp = {2024-04-10T16:54:56.000+0200},
title = {Key parameters driving transistor degradation in advanced strained SiGe channels.},
url = {http://dblp.uni-trier.de/db/conf/irps/irps2018.html#HuardNAPFMMB18},
year = 2018
}