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Key parameters driving transistor degradation in advanced strained SiGe channels.

V. Huard, C. Ndiaye, M. Arabi, N. Parihar, X. Federspiel, S. Mhira, S. Mahapatra, and A. Bravaix. IRPS, page 4-1. IEEE, (2018)

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Konrad Federspiel

Ruth Federspiel

X Schmid

X Lin

X Roth

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Frequency dependant gate oxide TDDB model.M. Arabi, X. Federspiel, F. Cacho, M. Rafik, S. Blonkowski, X. Garros, and G. Guibaudo. IRPS, page 25-1. IEEE, (2022)Characterization and modeling of DCR and DCR drift variability in SPADs.M. Sicre, X. Federspiel, B. Mamdy, D. Roy, and F. Calmon. IRPS, page 1-5. IEEE, (2023)Guidelines for intermediate back end of line (BEOL) for 3D sequential integration.C. Fenouillet-Béranger, S. Beaurepaire, F. Deprat, A. Sousa, L. Brunet, P. Batude, O. Rozeau, F. Andrieu, P. Besombes, M. Samson and 18 other author(s). ESSDERC, page 252-255. IEEE, (2017)Integrated Test Circuit for Off-State Dynamic Drain Stress Evaluation.J. Hai, F. Cacho, X. Federspiel, T. Garba-Seybou, A. Divay, E. Lauga-Larroze, and J. Arnould. IRPS, page 1-6. IEEE, (2023)Characterization of Low Drop-Out during ageing and design for yield.R. Lajmi, F. Cacho, E. Lauga-Larroze, S. Bourdel, P. Benech, V. Huard, and X. Federspiel. Microelectron. Reliab., (2017)Modeling self-heating effects in advanced CMOS nodes.M. Arabi, A. Cros, X. Federspiel, C. Ndiaye, V. Huard, and M. Rafik. IRPS, page 3-1. IEEE, (2018)A new method for quickly evaluating reversible and permanent components of the BTI degradation.X. Garros, A. Subirats, G. Reimbold, F. Gaillard, C. Diouf, X. Federspiel, V. Huard, and M. Rafik. IRPS, page 6-1. IEEE, (2018)Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).A. Laurent, X. Garros, S. Barraud, J. Pelloux-Prayer, M. Cassé, F. Gaillard, X. Federspiel, D. Roy, E. Vincent, and G. Ghibaudo. IRPS, page 6. IEEE, (2018)Integrated Test Structures for Reliability Investigation under Dynamic Stimuli.F. Cacho, D. Nouguier, M. Arabi, X. Federspiel, Y. Carminati, and M. Saliva. IOLTS, page 1-5. IEEE, (2018)Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology.A. Benoist, S. Denorme, X. Federspiel, B. Allard, and P. Candelier. IRPS, page 3. IEEE, (2015)

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Disambiguation of "Federspiel, X."

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Key parameters driving transistor degradation in advanced strained SiGe channels.

Please choose a person to relate this publication to

Konrad Federspiel

Ruth Federspiel

X Schmid

X Lin

X Roth

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Federspiel, X."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Key parameters driving transistor degradation in advanced strained SiGe channels.

Please choose a person to relate this publication to

Konrad Federspiel

Ruth Federspiel

X Schmid

X Lin

X Roth

Other publications of authors with the same name

Disambiguation

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URL
DOI
BibTeX
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Chicago
DIN 1505
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Key parameters driving transistor degradation in advanced strained SiGe channels.