%0 Conference Paper %1 conf/isscc/LeeCCKCOLKPWPRCKKSLCCCKYJJKKK07 %A Lee, KwangJin %A Cho, Beak-Hyung %A Cho, Woo-Yeong %A Kang, Sangbeom %A Choi, Byung-Gil %A Oh, Hyung-Rok %A Lee, Changsoo %A Kim, Hye-Jin %A min Park, Joon %A Wang, Qi %A Park, Mu-Hui %A Ro, Yu-Hwan %A Choi, Joon-Yong %A Kim, Ki-Sung %A Kim, Young-Ran %A Shin, In-Cheol %A won Lim, Ki %A Cho, Ho-Keun %A Choi, ChangHan %A ryul Chung, Won %A Kim, Du-Eung %A Yu, Kwang-Suk %A Jeong, Gitae %A Jeong, Hongsik %A Kwak, Choong-Keun %A Kim, Chang-Hyun %A Kim, Kinam %B ISSCC %D 2007 %I IEEE %K dblp %P 472-616 %T A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput. %U http://dblp.uni-trier.de/db/conf/isscc/isscc2007.html#LeeCCKCOLKPWPRCKKSLCCCKYJJKKK07 %@ 1-4244-0853-9

@inproceedings{conf/isscc/LeeCCKCOLKPWPRCKKSLCCCKYJJKKK07, added-at = {2022-02-25T00:00:00.000+0100}, author = {Lee, KwangJin and Cho, Beak-Hyung and Cho, Woo-Yeong and Kang, Sangbeom and Choi, Byung-Gil and Oh, Hyung-Rok and Lee, Changsoo and Kim, Hye-Jin and min Park, Joon and Wang, Qi and Park, Mu-Hui and Ro, Yu-Hwan and Choi, Joon-Yong and Kim, Ki-Sung and Kim, Young-Ran and Shin, In-Cheol and won Lim, Ki and Cho, Ho-Keun and Choi, ChangHan and ryul Chung, Won and Kim, Du-Eung and Yu, Kwang-Suk and Jeong, Gitae and Jeong, Hongsik and Kwak, Choong-Keun and Kim, Chang-Hyun and Kim, Kinam}, biburl = {https://www.bibsonomy.org/bibtex/28b9c2fa0123190e8061cab491bc284b7/dblp}, booktitle = {ISSCC}, crossref = {conf/isscc/2007}, ee = {https://doi.org/10.1109/ISSCC.2007.373499}, interhash = {8513a04dbe74a308faf1b96416dd4313}, intrahash = {8b9c2fa0123190e8061cab491bc284b7}, isbn = {1-4244-0853-9}, keywords = {dblp}, pages = {472-616}, publisher = {IEEE}, timestamp = {2024-04-10T11:05:11.000+0200}, title = {A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput.}, url = {http://dblp.uni-trier.de/db/conf/isscc/isscc2007.html#LeeCCKCOLKPWPRCKKSLCCCKYJJKKK07}, year = 2007 }