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%0 Conference Paper
%1 conf/isocc/ShenZYZ19
%A Shen, Zong Jie
%A Zhao, Ce Zhou
%A Yang, Li
%A Zhao, Chun
%B ISOCC
%D 2019
%I IEEE
%K dblp
%P 182-183
%T Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures.
%U http://dblp.uni-trier.de/db/conf/isocc/isocc2019.html#ShenZYZ19
%@ 978-1-7281-2478-0
@inproceedings{conf/isocc/ShenZYZ19,
added-at = {2020-03-20T00:00:00.000+0100},
author = {Shen, Zong Jie and Zhao, Ce Zhou and Yang, Li and Zhao, Chun},
biburl = {https://www.bibsonomy.org/bibtex/27c1dc03049890f0978f060abdfc39da3/dblp},
booktitle = {ISOCC},
crossref = {conf/isocc/2019},
ee = {https://doi.org/10.1109/ISOCC47750.2019.9027657},
interhash = {9b17233134fa10664ff9d425fb196716},
intrahash = {7c1dc03049890f0978f060abdfc39da3},
isbn = {978-1-7281-2478-0},
keywords = {dblp},
pages = {182-183},
publisher = {IEEE},
timestamp = {2020-03-21T11:56:36.000+0100},
title = {Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures.},
url = {http://dblp.uni-trier.de/db/conf/isocc/isocc2019.html#ShenZYZ19},
year = 2019
}
