%0 Conference Paper %1 conf/isocc/ShenZYZ19 %A Shen, Zong Jie %A Zhao, Ce Zhou %A Yang, Li %A Zhao, Chun %B ISOCC %D 2019 %I IEEE %K dblp %P 182-183 %T Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures. %U http://dblp.uni-trier.de/db/conf/isocc/isocc2019.html#ShenZYZ19 %@ 978-1-7281-2478-0

@inproceedings{conf/isocc/ShenZYZ19, added-at = {2020-03-20T00:00:00.000+0100}, author = {Shen, Zong Jie and Zhao, Ce Zhou and Yang, Li and Zhao, Chun}, biburl = {https://www.bibsonomy.org/bibtex/27c1dc03049890f0978f060abdfc39da3/dblp}, booktitle = {ISOCC}, crossref = {conf/isocc/2019}, ee = {https://doi.org/10.1109/ISOCC47750.2019.9027657}, interhash = {9b17233134fa10664ff9d425fb196716}, intrahash = {7c1dc03049890f0978f060abdfc39da3}, isbn = {978-1-7281-2478-0}, keywords = {dblp}, pages = {182-183}, publisher = {IEEE}, timestamp = {2020-03-21T11:56:36.000+0100}, title = {Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures.}, url = {http://dblp.uni-trier.de/db/conf/isocc/isocc2019.html#ShenZYZ19}, year = 2019 }