Article,
A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate.
W. Jeong, J. Im, D. Kim, S. Nam, D. Shim, M. Choi, H. Yoon, D. Kim, Y. Kim, H. Park, D. Kwak, S. Park, S. Yoon, W. Hahn, J. Ryu, S. Shim, K. Kang, J. Ihm, I. Kim, D. Lee, J. Cho, M. Kim, J. hoon Jang, S. Hwang, D. Byeon, H. Yang, K. Park, K. Kyung, and J. Choi.IEEE J. Solid State Circuits, 51 (1): 204-212 (2016)
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- 2016
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- IEEE J. Solid State Circuits
- number
- 1
- pages
- 204-212
- volume
- 51
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- https://doi.org/10.1109/JSSC.2015.2474117
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- http://dblp.uni-trier.de/db/journals/jssc/jssc51.html#JeongIKNSCYKKPK16
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%1 journals/jssc/JeongIKNSCYKKPK16
%A Jeong, Woopyo
%A Im, Jae-Woo
%A Kim, Doo-Hyun
%A Nam, Sangwan
%A Shim, Dong-Kyo
%A Choi, Myung-Hoon
%A Yoon, Hyun-Jun
%A Kim, Dae-Han
%A Kim, Youse
%A Park, Hyun Wook
%A Kwak, Dong-Hun
%A Park, Sang-Won
%A Yoon, Seok-Min
%A Hahn, Wook-Ghee
%A Ryu, Jinho
%A Shim, Sang-Won
%A Kang, Kyung-Tae
%A Ihm, Jeong-Don
%A Kim, In-Mo
%A Lee, Doosub
%A Cho, Ji-Ho
%A Kim, Moosung
%A hoon Jang, Jae
%A Hwang, Sang-Won
%A Byeon, Dae-Seok
%A Yang, Hyang-Ja
%A Park, Ki-Tae
%A Kyung, Kyehyun
%A Choi, Jeong-Hyuk
%D 2016
%J IEEE J. Solid State Circuits
%K dblp
%N 1
%P 204-212
%T A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate.
%U http://dblp.uni-trier.de/db/journals/jssc/jssc51.html#JeongIKNSCYKKPK16
%V 51
@article{journals/jssc/JeongIKNSCYKKPK16,
added-at = {2020-08-30T00:00:00.000+0200},
author = {Jeong, Woopyo and Im, Jae-Woo and Kim, Doo-Hyun and Nam, Sangwan and Shim, Dong-Kyo and Choi, Myung-Hoon and Yoon, Hyun-Jun and Kim, Dae-Han and Kim, Youse and Park, Hyun Wook and Kwak, Dong-Hun and Park, Sang-Won and Yoon, Seok-Min and Hahn, Wook-Ghee and Ryu, Jinho and Shim, Sang-Won and Kang, Kyung-Tae and Ihm, Jeong-Don and Kim, In-Mo and Lee, Doosub and Cho, Ji-Ho and Kim, Moosung and hoon Jang, Jae and Hwang, Sang-Won and Byeon, Dae-Seok and Yang, Hyang-Ja and Park, Ki-Tae and Kyung, Kyehyun and Choi, Jeong-Hyuk},
biburl = {https://www.bibsonomy.org/bibtex/221331e823a700c1a4de2ad01bbd81f29/dblp},
ee = {https://doi.org/10.1109/JSSC.2015.2474117},
interhash = {d2e5a83b5d8f58d4bd29383b3f945834},
intrahash = {21331e823a700c1a4de2ad01bbd81f29},
journal = {IEEE J. Solid State Circuits},
keywords = {dblp},
number = 1,
pages = {204-212},
timestamp = {2020-08-31T11:43:59.000+0200},
title = {A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate.},
url = {http://dblp.uni-trier.de/db/journals/jssc/jssc51.html#JeongIKNSCYKKPK16},
volume = 51,
year = 2016
}