%0 Journal Article %1 journals/tcasII/LinLWPLZ21 %A Lin, Zhiting %A Li, Luanyun %A Wu, Xiulong %A Peng, Chunyu %A Lu, Wenjuan %A Zhao, Qiang %D 2021 %J IEEE Trans. Circuits Syst. II Express Briefs %K dblp %N 7 %P 2628-2632 %T Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption. %U http://dblp.uni-trier.de/db/journals/tcasII/tcasII68.html#LinLWPLZ21 %V 68

@article{journals/tcasII/LinLWPLZ21, added-at = {2023-05-03T00:00:00.000+0200}, author = {Lin, Zhiting and Li, Luanyun and Wu, Xiulong and Peng, Chunyu and Lu, Wenjuan and Zhao, Qiang}, biburl = {https://www.bibsonomy.org/bibtex/23454c836395f0b2a47a9190dab06f043/dblp}, ee = {https://doi.org/10.1109/TCSII.2021.3057678}, interhash = {e58ab845aff537364bcf44aa64d98756}, intrahash = {3454c836395f0b2a47a9190dab06f043}, journal = {IEEE Trans. Circuits Syst. II Express Briefs}, keywords = {dblp}, number = 7, pages = {2628-2632}, timestamp = {2024-04-08T16:52:50.000+0200}, title = {Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption.}, url = {http://dblp.uni-trier.de/db/journals/tcasII/tcasII68.html#LinLWPLZ21}, volume = 68, year = 2021 }