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Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption.

Z. Lin, L. Li, X. Wu, C. Peng, W. Lu, and Q. Zhao. IEEE Trans. Circuits Syst. II Express Briefs, 68 (7): 2628-2632 (2021)

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Chunyu Wang

Chunyu Song

Changgeng Peng

Xiao-Wei Peng

Martin Peng

Other publications of authors with the same name

A Fully Digital SRAM-Based Four-Layer In-Memory Computing Unit Achieving Multiplication Operations and Results Store.Z. Lin, S. Zhang, Q. Jin, J. Xia, Y. Liu, K. Yu, J. Zheng, X. Xu, X. Fan, K. Li and 5 other author(s). IEEE Trans. Very Large Scale Integr. Syst., 31 (6): 776-788 (June 2023)Threshold Switching Memristor-Based Voltage Regulative Circuit.Z. Wu, C. Zhang, J. Zou, C. Peng, and X. Wu. IEEE Trans. Circuits Syst. II Express Briefs, 70 (3): 1034-1038 (March 2023)Physical mechanism study of N-well doping effects on the single-event transient characteristic of PMOS.Q. Zhao, C. Peng, C. Liu, and X. Wu. IEICE Electron. Express, 16 (17): 20190407 (2019)MS3DAAM: Multi-scale 3-D Analytic Attention Module for Convolutional Neural Networks.Y. Wang, S. Tan, and C. Peng. ICONIP (1), volume 14447 of Lecture Notes in Computer Science, page 104-117. Springer, (2023)Configurable in-memory computing architecture based on dual-port SRAM.Y. Zhao, Y. Liu, J. Zheng, Z. Tong, X. Wang, R. Yu, X. Wu, Y. Zhou, C. Peng, W. Lu and 2 other author(s). Microelectron. J., (2024)Human dynamics in mobile social networks: A study of inter-node relationships.Z. Lin, C. Peng, X. Wu, and X. Jiang. FSKD, page 806-810. IEEE, (2015)Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption.Z. Lin, L. Li, X. Wu, C. Peng, W. Lu, and Q. Zhao. IEEE Trans. Circuits Syst. II Express Briefs, 68 (7): 2628-2632 (2021)Configurable Memory With a Multilevel Shared Structure Enabling In-Memory Computing.Y. Zhao, Z. Lin, X. Wu, Q. Zhao, W. Lu, C. Peng, Z. Tong, and J. Chen. IEEE Trans. Very Large Scale Integr. Syst., 30 (5): 566-578 (2022)Challenges and Solutions of the TFET Circuit Design.Z. Lin, P. Chen, L. Ye, X. Yan, L. Dong, S. Zhang, Z. Yang, C. Peng, X. Wu, and J. Chen. IEEE Trans. Circuits Syst., 67-I (12): 4918-4931 (2020)Two-Direction In-Memory Computing Based on 10T SRAM With Horizontal and Vertical Decoupled Read Ports.Z. Lin, Z. Zhu, H. Zhan, C. Peng, X. Wu, Y. Yao, J. Niu, and J. Chen. IEEE J. Solid State Circuits, 56 (9): 2832-2844 (2021)

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Disambiguation of "Peng, Chunyu"

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Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption.

Please choose a person to relate this publication to

Chunyu Wang

Chunyu Song

Changgeng Peng

Xiao-Wei Peng

Martin Peng

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Peng, Chunyu"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption.

Please choose a person to relate this publication to

Chunyu Wang

Chunyu Song

Changgeng Peng

Xiao-Wei Peng

Martin Peng

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption.