%0 Journal Article %1 Verghese2007 %A Verghese, Simon %A Donnelly, Joseph P. %A Duerr, Erik K. %A McIntosh, K. Alex %A Chapman, David C. %A Vineis, Christopher J. %A Smith, Gary M. %A Funk, Joseph E. %A Jensen, Katharine Estelle %A Hopman, Pablo I. %A Shaver, David C. %A Aull, Brian F. %A Aversa, Joseph C. %A Frechette, Jonathan P. %A Glettler, James B. %A Liau, Zong Long %A Mahan, Joseph M. %A Mahoney, Leonard J. %A Molvar, Karen M. %A O'Donnell, Frederick J. %A Oakley, Douglas C. %A Ouellette, Edward J. %A Renzi, Matthew J. %A Tyrrell, Brian M. %C 445 HOES LANE, PISCATAWAY, NJ 08855 USA %D 2007 %I IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC %J IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS %K (APDs); (GM-APD); APD Geiger-mode InP; avalanche counting; detection photodiodes photon single %N 4 %P 870-886 %R 10.1109/JSTQE.2007.904464 %T Arrays of InP-based avalanche photodiodes for photon counting %V 13 %X Arrays of InP-based avalanche photodiodes (APDs) with InGaAsP absorber regions have been fabricated and characterized in the Geiger mode for photon-counting applications. Measurements of APDs with InGaAsP absorbers optimized for 1.06 mu m wavelength show dark count rates (DCRs) < 20 kHz for room-temperature operation with photon detection efficiency (PDE) up to 50\% and a reset or dead time of 1 mu s. APDs with InGaAs absorbers optimized for 1.55 mu m wavelength and 240 K temperature have DCRs < 20 kHz, PDE up to 45\%, and a reset time of similar to 6 mu s. Arrays for both wavelengths have been fabricated and packaged with Gal? microlenses (of 100 and 50 pm pitch) and CMOS readout integrated circuits (ROICs). Comparisons are made between ROICs that operate in the framed-readout mode as well as those that operate in continuous-readout mode.

@article{Verghese2007, abstract = {Arrays of InP-based avalanche photodiodes (APDs) with InGaAsP absorber regions have been fabricated and characterized in the Geiger mode for photon-counting applications. Measurements of APDs with InGaAsP absorbers optimized for 1.06 mu m wavelength show dark count rates (DCRs) < 20 kHz for room-temperature operation with photon detection efficiency (PDE) up to 50\% and a reset or dead time of 1 mu s. APDs with InGaAs absorbers optimized for 1.55 mu m wavelength and 240 K temperature have DCRs < 20 kHz, PDE up to 45\%, and a reset time of similar to 6 mu s. Arrays for both wavelengths have been fabricated and packaged with Gal? microlenses (of 100 and 50 pm pitch) and CMOS readout integrated circuits (ROICs). Comparisons are made between ROICs that operate in the framed-readout mode as well as those that operate in continuous-readout mode.}, added-at = {2009-09-04T22:06:29.000+0200}, address = {445 HOES LANE, PISCATAWAY, NJ 08855 USA}, affiliation = {Verghese, S (Reprint Author), MIT, Lincoln Lab, Lexington, MA 02420 USA. MIT, Lincoln Lab, Lexington, MA 02420 USA.}, author = {Verghese, Simon and Donnelly, Joseph P. and Duerr, Erik K. and McIntosh, K. Alex and Chapman, David C. and Vineis, Christopher J. and Smith, Gary M. and Funk, Joseph E. and Jensen, Katharine Estelle and Hopman, Pablo I. and Shaver, David C. and Aull, Brian F. and Aversa, Joseph C. and Frechette, Jonathan P. and Glettler, James B. and Liau, Zong Long and Mahan, Joseph M. and Mahoney, Leonard J. and Molvar, Karen M. and O'Donnell, Frederick J. and Oakley, Douglas C. and Ouellette, Edward J. and Renzi, Matthew J. and Tyrrell, Brian M.}, author-email = {simonv@ll.mit.edu}, biburl = {https://www.bibsonomy.org/bibtex/23da24758caf1133537ec6bc4da55f9eb/scotbrad}, doc-delivery-number = {212KZ}, doi = {10.1109/JSTQE.2007.904464}, file = {[Verghese2007] Arrays of InP-based APDs for photon counting.pdf:APD\\[Verghese2007] Arrays of InP-based APDs for photon counting.pdf:PDF}, interhash = {70ed173415a1966f12115c8a68434873}, intrahash = {3da24758caf1133537ec6bc4da55f9eb}, issn = {1077-260X}, journal = {IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS}, journal-iso = {IEEE J. Sel. Top. Quantum Electron.}, keywords = {(APDs); (GM-APD); APD Geiger-mode InP; avalanche counting; detection photodiodes photon single}, keywords-plus = {MU-M; DESIGN; DIODES}, language = {English}, month = {JUL-AUG}, number = 4, number-of-cited-references = {24}, pages = {870-886}, publisher = {IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC}, subject-category = {Engineering, Electrical \& Electronic; Optics}, times-cited = {8}, timestamp = {2009-09-04T22:06:41.000+0200}, title = {Arrays of InP-based avalanche photodiodes for photon counting}, type = {Article}, unique-id = {ISI:000249596500004}, volume = 13, year = 2007 }