%0 Journal Article %1 WOS:000224739100047 %A Oliveira, CLN %A Freire, JAK %A Freire, VN %A Farias, GA %C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS %D 2004 %I ELSEVIER SCIENCE BV %J APPLIED SURFACE SCIENCE %K dots; gradual interfaces} quantum {exciton; %N 1-4 %P 266-269 %R 10.1016/j.apsusc.2004.06.048 %T Effects of interfacial profiles on quantum levels in InxGa1-xAs/GaAs graded spherical quantum dots %V 237 %X A theoretical scheme describing effects of interfacial profiles on the properties of confined excitons in InxGa1-xAs/GaAs spherical quantum dots (QDs) is presented. A two parameter variational method is used to calculate the heavy-hole and light-hole exciton energy. Our numerical results show differences in the ground state exciton energy higher than 100 mev due to gradual rather than abrupt interfaces in a 35 Angstrom QD. (C) 2004 Elsevier B.V. All rights reserved.

@article{WOS:000224739100047, abstract = {A theoretical scheme describing effects of interfacial profiles on the properties of confined excitons in InxGa1-xAs/GaAs spherical quantum dots (QDs) is presented. A two parameter variational method is used to calculate the heavy-hole and light-hole exciton energy. Our numerical results show differences in the ground state exciton energy higher than 100 mev due to gradual rather than abrupt interfaces in a 35 Angstrom QD. (C) 2004 Elsevier B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, author = {Oliveira, CLN and Freire, JAK and Freire, VN and Farias, GA}, biburl = {https://www.bibsonomy.org/bibtex/26859a10d7bd41edd60f8231762327bfe/ppgfis_ufc_br}, doi = {10.1016/j.apsusc.2004.06.048}, interhash = {4cec4c9d7208801785e434780284e234}, intrahash = {6859a10d7bd41edd60f8231762327bfe}, issn = {0169-4332}, journal = {APPLIED SURFACE SCIENCE}, keywords = {dots; gradual interfaces} quantum {exciton;}, note = {7th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, JAPAN, NOV 16-20, 2003}, number = {1-4}, organization = {Japan Soc Appl Phys; Minist Educ, Culture, Sports, Sci & Technol; Commemorat Assoc Japan World Exposit 1970; Natl Inst Mat Sci; Nara Convent Bur}, pages = {266-269}, publisher = {ELSEVIER SCIENCE BV}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Effects of interfacial profiles on quantum levels in InxGa1-xAs/GaAs graded spherical quantum dots}, tppubtype = {article}, volume = 237, year = 2004 }