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Effects of interfacial profiles on quantum levels in InxGa1-xAs/GaAs graded spherical quantum dots

, , , and . APPLIED SURFACE SCIENCE, 237 (1-4): 266-269 (2004)7th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, JAPAN, NOV 16-20, 2003.
DOI: 10.1016/j.apsusc.2004.06.048

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Effects of interfacial profiles on quantum levels in InxGa1-xAs/GaAs graded spherical quantum dots, , , and . APPLIED SURFACE SCIENCE, 237 (1-4): 266-269 (2004)7th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, JAPAN, NOV 16-20, 2003.Inhomogeneous broadening arising from interface fluctuations in strained InxGa1-xAs/GaAs and (InuGa1-uAs)(v)(InP)(1-v)/InP quantum wells, , , and . APPLIED SURFACE SCIENCE, 234 (1-4): 38-44 (2004)9th International Conference on Formation of Semiconductor Interfaces (ICFSI 9), Madrid, SPAIN, SEP 15-19, 2003.