In this paper we present a silicon wafer bonding technique for 3D microstructures using MEMS process technology. Photo-definable material with patternable characteristics served as the bonding layer between the silicon wafers. A bonding process was developed and several types of photo-definable material were tested for bonding strength and pattern spatial resolution. The results indicated that SU-8 is the best material with a bonding strength of up to 213 kg cm$^−2$ (20.6 MPa), and a spatial resolution of 10 μm, at a layer thickness of up to 100 μm. The low-temperature bonding technique that is presented is particularly suitable for microstructure and microelectronics integration involved in MEMS packaging.
%0 Journal Article
%1 Pan:Bonding
%A Pan, C-T
%A Yang, H
%A Shen, S-C
%A Chou, M-C
%A Chou, H-P
%D 2002
%J Journal of Micromechanics and Microengineering
%K imported
%N 5
%P 611-615
%T A low-temperature wafer bonding technique using patternable materials
%U http://stacks.iop.org/0960-1317/12/611
%V 12
%X In this paper we present a silicon wafer bonding technique for 3D microstructures using MEMS process technology. Photo-definable material with patternable characteristics served as the bonding layer between the silicon wafers. A bonding process was developed and several types of photo-definable material were tested for bonding strength and pattern spatial resolution. The results indicated that SU-8 is the best material with a bonding strength of up to 213 kg cm$^−2$ (20.6 MPa), and a spatial resolution of 10 μm, at a layer thickness of up to 100 μm. The low-temperature bonding technique that is presented is particularly suitable for microstructure and microelectronics integration involved in MEMS packaging.
@article{Pan:Bonding,
abstract = {In this paper we present a silicon wafer bonding technique for 3D microstructures using MEMS process technology. Photo-definable material with patternable characteristics served as the bonding layer between the silicon wafers. A bonding process was developed and several types of photo-definable material were tested for bonding strength and pattern spatial resolution. The results indicated that SU-8 is the best material with a bonding strength of up to 213 kg cm$^{\−2}$ (20.6 MPa), and a spatial resolution of 10 \μm, at a layer thickness of up to 100 \μm. The low-temperature bonding technique that is presented is particularly suitable for microstructure and microelectronics integration involved in MEMS packaging. },
added-at = {2009-07-13T16:53:55.000+0200},
author = {Pan, C-T and Yang, H and Shen, S-C and Chou, M-C and Chou, H-P},
biburl = {https://www.bibsonomy.org/bibtex/291c214fd559be65febbe640b15a6298d/enodev},
description = {rfmems},
interhash = {8166d25749521e65cc96f96288284154},
intrahash = {91c214fd559be65febbe640b15a6298d},
journal = {Journal of Micromechanics and Microengineering},
keywords = {imported},
number = 5,
pages = {611-615},
timestamp = {2009-07-14T08:40:47.000+0200},
title = {A low-temperature wafer bonding technique using patternable materials},
url = {http://stacks.iop.org/0960-1317/12/611},
volume = 12,
year = 2002
}