High-performance semiconductor materials and devices are needed to supply the growing energy and computing demand. Organic semiconductors (OSCs) are attractive options for opto-electronic devices, due to their low cost, extensive tunability, easy fabrication, and flexibility. Semiconducting single-walled carbon nanotubes (s-SWCNTs) have been extensively studied due to their high carrier mobility, stability and opto-electronic tunability. Although molecular charge transfer doping affords widely tunable carrier density and conductivity in s-SWCNTs (and OSCs in general), a pervasive challenge for such systems is reliable measurement of charge carrier density and mobility. In this work we demonstrate a direct quantification of charge carrier density, and by extension carrier mobility, in chemically doped s-SWCNTs by a nuclear magnetic resonance approach. The experimental results are verified by a phase-space filling doping model, and we suggest this approach should be broadly applicable for OSCs. Our results show that hole mobility in doped s-SWCNT networks increases with increasing charge carrier density, a finding that is contrary to that expected for mobility limited by ionized impurity scattering. We discuss the implications of this important finding for additional tunability and applicability of s-SWCNT and OSC devices.
%0 Journal Article
%1 D3NH00480E
%A Hermosilla-Palacios, M. Alejandra
%A Martinez, Marissa
%A Doud, Evan A.
%A Hertel, Tobias
%A Spokoyny, Alexander M.
%A Cambré, Sofie
%A Wenseleers, Wim
%A Kim, Yong-Hyun
%A Ferguson, Andrew J.
%A Blackburn, Jeffrey L.
%D 2024
%I The Royal Society of Chemistry
%J Nanoscale Horiz.
%K myown
%P -
%R 10.1039/D3NH00480E
%T Carrier density and delocalization signatures in doped carbon nanotubes from quantitative magnetic resonance
%U http://dx.doi.org/10.1039/D3NH00480E
%X High-performance semiconductor materials and devices are needed to supply the growing energy and computing demand. Organic semiconductors (OSCs) are attractive options for opto-electronic devices, due to their low cost, extensive tunability, easy fabrication, and flexibility. Semiconducting single-walled carbon nanotubes (s-SWCNTs) have been extensively studied due to their high carrier mobility, stability and opto-electronic tunability. Although molecular charge transfer doping affords widely tunable carrier density and conductivity in s-SWCNTs (and OSCs in general), a pervasive challenge for such systems is reliable measurement of charge carrier density and mobility. In this work we demonstrate a direct quantification of charge carrier density, and by extension carrier mobility, in chemically doped s-SWCNTs by a nuclear magnetic resonance approach. The experimental results are verified by a phase-space filling doping model, and we suggest this approach should be broadly applicable for OSCs. Our results show that hole mobility in doped s-SWCNT networks increases with increasing charge carrier density, a finding that is contrary to that expected for mobility limited by ionized impurity scattering. We discuss the implications of this important finding for additional tunability and applicability of s-SWCNT and OSC devices.
@article{D3NH00480E,
abstract = {High-performance semiconductor materials and devices are needed to supply the growing energy and computing demand. Organic semiconductors (OSCs) are attractive options for opto-electronic devices{,} due to their low cost{,} extensive tunability{,} easy fabrication{,} and flexibility. Semiconducting single-walled carbon nanotubes (s-SWCNTs) have been extensively studied due to their high carrier mobility{,} stability and opto-electronic tunability. Although molecular charge transfer doping affords widely tunable carrier density and conductivity in s-SWCNTs (and OSCs in general){,} a pervasive challenge for such systems is reliable measurement of charge carrier density and mobility. In this work we demonstrate a direct quantification of charge carrier density{,} and by extension carrier mobility{,} in chemically doped s-SWCNTs by a nuclear magnetic resonance approach. The experimental results are verified by a phase-space filling doping model{,} and we suggest this approach should be broadly applicable for OSCs. Our results show that hole mobility in doped s-SWCNT networks increases with increasing charge carrier density{,} a finding that is contrary to that expected for mobility limited by ionized impurity scattering. We discuss the implications of this important finding for additional tunability and applicability of s-SWCNT and OSC devices.},
added-at = {2023-12-05T10:40:38.000+0100},
author = {Hermosilla-Palacios, M. Alejandra and Martinez, Marissa and Doud, Evan A. and Hertel, Tobias and Spokoyny, Alexander M. and Cambré, Sofie and Wenseleers, Wim and Kim, Yong-Hyun and Ferguson, Andrew J. and Blackburn, Jeffrey L.},
biburl = {https://www.bibsonomy.org/bibtex/2d43e66a6be5b1874e0a683937b36624d/hertel-group},
doi = {10.1039/D3NH00480E},
interhash = {e4db57d765e7168e6efe79056a930ad2},
intrahash = {d43e66a6be5b1874e0a683937b36624d},
journal = {Nanoscale Horiz.},
keywords = {myown},
pages = {-},
publisher = {The Royal Society of Chemistry},
timestamp = {2023-12-05T10:40:38.000+0100},
title = {Carrier density and delocalization signatures in doped carbon nanotubes from quantitative magnetic resonance},
url = {http://dx.doi.org/10.1039/D3NH00480E},
year = 2024
}